About site: Physics/Instruments and Supplies - Tectra Plasma Sources
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  About site: http://www.plasma-source.de/

Title: Physics/Instruments and Supplies - Tectra Plasma Sources Provides the Tectra Plasma Source, a multi-purpose source producing either atoms or ions and finds uses in a range of HV and UHV applications.
Teledyne_Hastings_Instruments Manufacturer of vacuum and flow instruments for the measurement and control of vacuum and gas flows.

UHV_Design Manufacturer or vacuum components for molecular beam epitaxy (MBE), UHV sputtering, vacuum thin films and other UHV vacuum deposition components.

Vacutec Produces hemispherical energy analysers,  electron, X ray, ion sources, and sample transfer. Includes list and description of products.

Vacuum_Controllers,_From_Hastings_Instruments Hastings Instruments manufactures a complete line of Vacuum Instruments including Vacuum Controllers, for the precise measurement and control of vacuum and gas flows.

Vatell_Corporation Produces a line of HFM heat flux microsensors and circular foil heat flux gages.

VME_for_Physics_and_Industrie Provides process control, supervisory data acquisition systems and VME scalers and counters.


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Plasma Source as atom source, ion source and atom/ion hybrid source (microwave plasma sourceplasmasource, plasma ion source, ion source, ECR source, atom source, atom beam source, microwave plasma source, plasma,source, microwave ion source, broad beam ion source, RF plasma source, RF source, kaufman ion source, kaufmann ion source, kaufman source, kaufmann source, microwave, ECR, RFGen2 logoPlasma Source: introducing the secondgeneration of Atom Sources, Ion Sources and Atom/Ion Hybrid Sources. <b>Plasma</b> <b>Source,</b> Gen2tectra Gen2 Plasma Source  Since 1997 tectra has produced morethan 50 Plasma Sources as Atom Source, Ion Source and Atom/Ion Hybrid Source.Based on this experience we now present the second generation sources,the Gen2.New Features of Gen2 Plasma Source:high performance direct microwave coupling(without need of tuning)improved microwave guide with minimisedattenuationhigher plasma density resulting in higherion currentbakeable magnets, still on air side, withclosed cooling loopmore compact, space saving air side setupAl2O3 plasma cupnow standard with higher yield of secondary electrons and better resistanceagainst aggressive gasesadditional display of extraction currentto optimise the beam shapeimproved stability of microwave generationnew grid supply for more versatile, widerange ion energies of 20eV - 2keV with same grid set LED to show if plasma is on or off  pdfversion of data sheet (206kB)   Plasma SourceAtom Source, Ion Sourceand Atom/Ion Hybrid SourceThe tectra Plasma Source* is a multi-purposesource which can easily be user configured to produce either atoms or ionsand finds uses in a wide range of HV and UHV applications. By easy exchangeof the beam optics the source can be configured to operate in several distinctmodes. The main modes are Atom Source, Ion Source and Atom/Ion Hybrid Source.Besides delivering different species (atoms, ions, radicals) the PlasmaSource covers the complete energy range from neutral thermal atoms to above1.500eV. The shape of the beam and current densities can be altered byusing different beam optics.A plasma is created in a coaxial waveguideby evanescent wave coupling of microwave energy at 2.45GHz.  The plasmais further enhanced by the ECR action of a quadrupole magnetic field producingan extensive surface in the plasma on which electron cyclotron resonanceat the given microwave frequency takes place.   <b>Plasma</b> Source + Power Suppliestectra Plasma Source + Power Supplies(new pictures coming soon)Key Features: Filamentless Suitable for use with most gases includingreactive gases such as oxygen, chlorine, hydrogen, nitrogen etc.No microwave tuning  Factory set. Simply turn the plasma onand off.User configurable  The extraction optics are designed tobe quickly and easily exchanged allowing users to customise their sourceto suit a particular combination of sample size, working pressure and currentdensity. Easily exchanged apertures enable beam diameter, gas load andatom flux to be optimised.simple bakeout preparationnew bakeable ECR magnets allow simplebekeout preparation by just undoing 4 screws. The magnets are still onthe air side on a closed cooling loop. Hence no sintered material is in-vacuum.Al2O3 plasma regionAlumina plasma cup as standard with higheryield of secondary electrons and better resistance against aggressive gasessuch as Oxygencompactthe air side envilope sizes are broughtto a minimum of just 258mm from flange (knife edge side) to case end (seeschematic)Integration of the robust microwave generatorand the ion source, mean that no tuning of the source is required and thereis no waveguide to construct or install.Due to the evanescent wave coupling, noelectrodes are present in the plasma i.e. no filaments or other metal. The plasma is entirely surrounded by alumina or other dielectric materialse.g. BN. Therefore the source is also suitable for use with reactive gasessuch as oxygen and hydrogen. A selection of apertures and conductancesallows the optimum balance between gas flow, working pressure and beamcurrent to be achieved.The source is designed as a true UHV sourcemaking it suitable for use in UHV applications such as MBE as well as sputteringand other HV processes. Stainless steel, OFHC copper, BN, alumina and Kaptonare the only materials exposed to the vacuum. All joints are welded. Themagnets and all microwave parts are easily removed for bakeout at temperaturesin excess of 200°C.  Modes of operation:Four distinct modes of operation are possiblewith this source depending principally on the beam optics which are fitted.The beam optics are constructed as one piece and may easily be exchangedby the user to allow the source to be used in another mode. The parts necessaryto convert the source from one mode to another are all retrofittable bythe user and can be added at any time in the future as research needs change.(1) Atom sourceThe specially designed aperture plateinhibits ions from escaping from the plasma, yet allows reactive neutralsto escape and form the dominant beam fraction. The emitted particles arelargely thermalised through multiple collisions on passing through theaperture.  These neutrals have proven to be very effective in lowdamage surface treatments such as nitridation and oxidation(1,2). The furtheraddition of an ion-trap option can completely remove the residual ion contentfrom the beam where this may be of concern. (2) Downstream plasma sourceWith this aperture plate a larger proportionof the charged particles in the plasma are allowed to escape. There isno active extraction or acceleration of the charged particles but a considerablyhigher ion current reaches the sample in this mode as compared with theatom source above. Samples mounted a few centimetres from the source aresaid to be  “downstream” of the ion source and away from the mostenergetic species. Ion energies are defined by the intrinsic plasma potentialand are around 25eV.(3) Hybrid sourceThe beam optics in this mode combine theatom source aperture plate with electrodes providing active extractionof ions from the plasma. With no voltage applied to the electrodes thesource functions like the atom source at (1) above.  With voltageapplied to the electrodes, ions with controllable energy can be added tothe atom beam. Total beam current is in the ~50µA range.  Usingthis mode the advantages of both a low kinetic energy, chemically reactive,atom beam and a much higher kinetic energy, highly anisotropic ion beammay be explored.(4) Broad Beam Ion SourceDual or triple high conductance grid electrodesare used to produce the broad beam ion source mode.  For sputteringapplications, current densities at ~120mm of 2mA/cm² (focused optics)with ion energies of 1.3keV can be obtained while for deposition assistance(Ion Assisted Deposition or Dual Ion Beam Sputtering) the beam energy canbe reduced to less than 100eV with current densities still in the 0.05mA/cm²range.Atom Source Mode Applications: Nitriding e.g. GaN, AlN, GaAsN, SiN etc. Hydrogen cleaning, hydrogen assisted MBE. Oxidation e.g. ZnO, Superconductors, Opticalcoatings, Dielectrics. Doping e.g. ZnSe Ion Beam Mode Applications: Ion beam assisted deposition (IBAD) forboth UHV and HV processes Sputter deposition and dual ion beam sputtering Sputter cleaning / surface preparationin surface science, MBE and HV sputter processes. In-situ etching e.g. Chlorine <b>Plasma</b> Source schematic  Specificationsa) GeneralVacuum compatibility: Fully UHV compatibleBakeable:>200°CMicrowave power:250W max at 2.45GHzMagnet type:Permanent rare-earth.  Removeablefor bakeout without breaking vacuumMounting:NW63CF (4.5"OD)In vacuum length:300mm (custom lengths possible): In vacuum diameter max = 57mmBeam diameter:~25mm at source (narrower beams alsoeasily produced)Plasma cup:AluminaAperture:Alumina or Boron Nitride Gas flow rate:0.01-100sccm depending on apertureselectedWorking pressure:~10-7 Torr to 5x10-3 Torr depending on aperture, pump and application - please contact tectrato discuss your application.  Differential pumping option availableWorking Distance:50mm-300mm.  150mm typicalCooling:Fully water-cooled (including magnetron)Power supplies:MicrowaveGrid supply** Ion and Hybrid Sourceonly19” rack mount.  3U height. 230VAC,50Hz  or  115VAC, 60Hz19” rack mount.  3U height. 230VAC, 50Hz  or  115VAC, 60Hz  b) Atom sourceAtom flux>2x1016 atoms/cm2/sat 10cm Beam divergence:~ 15° half-angle typicalGasesNitrogen, Oxygen, Hydrogen (any mostother non-condensible gases)Working pressure:1x10-8 mabr to 1x10-1mbar  typical (using 500l/s pump) and depending on selected grids,pump, optional differential pumping and gases. Working distance:<50mm to>300mm (150mm typical)Options:(1) Residual Ion Trap(2) Differential pumping(3) Ion source retrofit kit(4) Plasma igniter  c) Ion sourceIon current:0 - 20mA (max.).  Total beam currentmeasured at 15cmIon current density:>2mA/cm2 at 1.3keV and>0.05mA/cm2at <100eV at 120mm distance.Ion energy:25eV - 2000eVBeam diameter:~25mm at source (narrower beams downto 1mm also easily produced)Extraction grids:Molybdenum (Graphite optionally)Focused and collimated beam grid setsavailableGas flow rate:5-10sccm typical (lower and higherflow ratespossible)Working pressure:1x10-8 mabr to 1x10-1mbar  typical (using 500l/s pump) and depending on selected grids,pump, optional differential pumping and gases. Working distance:<50mm to>300mm (150mm typical)Options:(1) Immersed filament beam neutralisation(2) Plane, focused and divergent gridsets made from molybdenum or pyrolytic graphite(3) Differential pumping(4) Shutter(5) Faraday Cup integrated in shutter    Options<b>Plasma</b> Source with differential pumping for low pressure operationPlasma Source with differential pumpingfor low pressure operation and with shutter <b>Plasma</b> Source with differential pumping for high pressure operation<b>Plasma</b> Source with differential pumping for high pressure operationPlasma Source with differential pumpingfor high pressure operation special Atom aperture for reduced flux/small samplesspecial Atom aperture for reduced flux/smallsamplesAtom aperture with quartz collimator tubeAtom aperture with quartz collimator tubespecial Atom aperture for reduced flux/smallsampleselongated version with second gas inletElongated version with second gas inletReferences:The role of neutral oxygen radicals in theoxidation of Ag films.  A. A. Schmidt, J. Offermann and R. Anton. Thin Solid Films 281-282 (1996) 105-107. Design and performance of a versatile cost-effectivemicrowave ECR plasma source for surface and thin film processing. R.Anton,T. Wiegner, W. Naumann, M. Liebmann, C. Klein, C. Bradley. Rev.Sci.Instr.Feb 2000 tectra GmbH reservesthe right to alter specifications without notice.Application Note*developed in collaborationwith Prof. Dr. Anton, University of Hamburg, Inst. fuer Angewandte Physik contact:tectra GmbH Reuterweg 65 D-60323 Frankfurt/M. Tel: Germany (+49) (0) 69 - 72 00 40 Fax: Germany (+49) (0) 69 - 72 04 00 email: info@tectra.de ContactHomeProductslast modified 15.11.03
 

Provides

the

Tectra

Plasma

Source,

a

multi-purpose

source

producing

either

atoms

or

ions

and

finds

uses

in

a

range

of

HV

and

UHV

applications.

http://www.plasma-source.de/

Tectra Plasma Sources 2008 November

dvd rental

dvd


Provides the Tectra Plasma Source, a multi-purpose source producing either atoms or ions and finds uses in a range of HV and UHV applications.

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